Datasheet

November 2013
Thermal Characteristics
Symbol Parameter
FQPF10N50CF
Unit
R
JC
Thermal Resistance, Junction to Case, Max. 2.58
o
C/W
R
JA
Thermal Resistance, Junction to Ambient, Max. 62.5
FQPF10N50CF
N-Channel QFET
®
FRFET
®
MOSFET
500 V, 10 A, 610 mΩ
Description
FQPF10N50CF — N-Channel QFET
®
FRFET
®
MOSFET
©2007 Fairchild Semiconductor Corporation
FQPF10N50CF Rev. C1
www.fairchildsemi.com
1
•
•
•
100% Avalanche Tested
•
•
Fast Recovery Body Diode
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
10 A, 500 V, R
DS(on)
= 610 mΩ (Max.) @ V
GS
= 10 V, I
D
= 5 A
Low Gate Charge (Typ. 43 nC)
Low C
rss
(Typ. 16 pF)
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Unit
V
DSS
Drain-Source Voltage V
I
D
Drain Current - Continuous (T
C
= 25°C)
A
- Continuous (T
C
= 100°C)
A
I
DM
Drain Current - Pulsed
(Note 1)
A
V
GSS
Gate-Source voltage V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
mJ
I
AR
Avalanche Current
(Note 1)
A
E
AR
Repetitive Avalanche Energy
(Note 1)
mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
V/ns
P
D
Power Dissipation (T
C
= 25°C) W
- Derate above 25°C
W/°C
T
J,
T
STG
Operating and Storage Temperature Range °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
FQPF10N50CF
500
10*
6.35*
40*
± 30
388
10
14.3
4.5
48
0.38
-55 to +150
300
TO-220F
G
D
S
G
S
D
*Drain current limited by maximum junction temperature