Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF11N50CF, MOSFET

November 2013

Thermal Characteristics

Symbol Parameter

FQPF11N50CF

Unit

JC

Thermal Resistance, Junction to Case, Max. 2.58

C/W

JA

Thermal Resistance, Junction to Ambient, Max. 62.5

FQPF11N50CF

N-Channel QFET

FRFET

MOSFET

500 V, 11 A, 550 mΩ

Description

FQPF11N50CF — N-Channel QFET

FRFET

MOSFET

FQPF11N50CF Rev. C1

www.fairchildsemi.com

•

100% Avalanche Tested

•

Fast Recovery Body Diode

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC),

and electronic lamp ballasts.

Features

11 A, 500 V, R

DS(on)

= 550 mΩ (Max.) @ V

= 10 V,

= 5.5 A

Low Gate Charge (Typ. 43 nC)

Low C

rss

(Typ. 20 pF)

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Symbol

Parameter

Unit

DSS

Drain-Source Voltage V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

Drain Current - Pulsed

(Note 1)

GSS

Gate-Source voltage V

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

dv/dt Peak Diode Recovery dv/dt

(Note 3)

V/ns

Power Dissipation (T

= 25°C) W

- Derate above 25°C

W/°C

STG

Operating and Storage Temperature Range °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

FQPF11N50CF

500

11*

44*

± 30

670

19.5

4.5

0.39

-55 to +150

300

TO-220F

*Drain current limited by maximum junction temperature

Summary of content (8 pages)

PAGE 1
FQPF11N50CF N-Channel QFET® FRFET® MOSFET 500 V, 11 A, 550 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQPF11N50CF Device FQPF11N50CF Electrical Characteristics Symbol Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Conditions Min Typ Max Unit 500 -- -- V 0.
PAGE 3
Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 4.5 V 1 10 ID, Drain Current [A] Top : ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 * Notes : 1. 250µs Pulse Test 2. TC = 25°C 150°C 1 10 25°C -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250µA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 5.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 TJ, Junction Temperature [°C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs.
PAGE 5
FQPF11N50CF — N-Channel QFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14.
PAGE 6
DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2005 Fairchild Semiconductor Corporation FQPF11N50CF Rev. C1 6 www.fairchildsemi.
PAGE 7
FQPF11N50CF — N-Channel QFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.