Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF13N50CF, MOSFET

November 2013

FQPF13N50CF — N-Channel QFET

FRFET

MOSFET

FQPF13N50CF Rev. C1

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQPF13N50CF Unit

DSS

Drain to Source Voltage 500

Drain Current

- Continuous (T

= 25

10.5 * A

- Continuous (T

= 100

6.6 * A

Drain Current - Pulsed (Note 1)

42 * A

GSS

Gate to Source Voltage ± 30

Single Pulsed Avalanche Energy (Note 2) 860

Avalanche Current (Note 1) 13

Repetitive Avalanche Energy (Note 1) 19.5

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5

V/ns

Power Dissipation

= 25

44 W

- Derate Above 25

0.35 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150

°C

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

°C

Symbol Parameter

FQPF13N50CF

Unit

θJC

Thermal Resistance, Junction to Case, Max.

2.58

°C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Drain current limited by maximum junction temperature.

FQPF13N50CF

N-Channel QFET

FRFET

MOSFET

500 V, 13 A, 540 mΩ

Features

• 13 A, 500 V, R

DS(on)

= 540 m (Max.) @ V

= 10 V,

= 6.5 A

• Low Gate Charge (Typ. 43 nC)

• Low Crss (Typ. 20 pF)

• 100% Avalanche Tested

• Fast Recovery Body Diode (Typ. 100 ns)

Description

This N-Channel enhancement mode power MOSFET is pro-

duced using Fairchild Semiconductor’s proprietary planar stripe

and DMOS technology. This advanced MOSFET technology

has been especially tailored to reduce on-state resistance, and

to provide superior switching performance and high avalanche

energy strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and elec-

tronic lamp ballasts.

TO-220F

Summary of content (8 pages)

PAGE 1
FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features Description • 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQPF13N50CF Device FQPF13N50CF Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS /ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 10 -1 10 -1 0 10 2 1 10 10 4 6 Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 1.
PAGE 4
(Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.5 A 0.5 0.0 -100 200 -50 100 150 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 14 10 μs 12 10 ID, Drain Current [A] 100 μs 1 1 ms 10 ms 100 ms DC 0 10 10 ※ Notes : o 1.
PAGE 5
0KΩ 200nF 12V FQPF13N50CF — N-Channel QFET® FRFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 6
FQPF13N50CF — N-Channel QFET® FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQPF13N50CF — N-Channel QFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.