Datasheet

FQP15P12 / FQPF15P12
Absolute Maximum Ratings T
C
= 25°C unles
s otherwise noted.
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
•
-15 A, -120 V, R
DS(on)
= 0.2 Ω (Max.) @ V
GS
=-10 V, I
D
= -7.5 A
• Low Gate Charge (Typ. 29 nC)
•
Low Crss (Typ. 110 pF)
•
100% Avalanche Tested
August 2014
P-Channel QFET
®
MOSFET
-120 V, -15 A, 0.2 Ω
•
175°C Maximum Junction Temperature Rating
www.fairc
hildsemi.com
FQP15P12 / FQPF15P12 P-Channel QFET
®
MOSFET
Symbol Parameter FQP15P12 FQPF15P12 Unit
V
DSS
Drain-Source Voltage -120 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-15 -15 * A
- Continuous (T
C
= 100°C)
-10.6 -10.6 * A
I
DM
Drain Current - Pulsed
(Note 1)
-60 -60 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1157 mJ
I
AR
Avalanche Current
(Note 1)
-15 A
E
AR
Repetitive Avalanche Energy
(Note 1)
10 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-5.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
100 41 W
- Derate above 25°C 0.67 0.27 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 °C
Symbol Parameter FQP15P12 FQPF15P12
Unit
R
θJC
Thermal Resistance, Junction-to-Case 1.5 3.66 °C/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. 40 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
1
©2003 Fairchild Semiconductor Corporation
FQP15P12 / FQPF15P12 Rev. C
2
TO-220
G
D
S
TO-220F
G
D
S
G
S
D