Datasheet

November 2013
©2000 Fairchild Semiconductor Corporation
FQPF16N15 Rev. C1
www.fairchildsemi.com
1
FQPF16N15 — N-Channel QFET
®
MOSFET
FQPF16N15
N-Channel QFET
®
MOSFET
150 V, 11.6 A, 160 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
11.6 A, 150 V, R
DS(on)
= 160 m (Max.) @ V
GS
= 10 V,
I
D
= 5.8 A
Low Gate Charge (Typ. 23 nC)
Low Crss (Typ. 30 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQPF16N15 Unit
V
DSS
Drain-Source Voltage 150 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
11.6 A
- Continuous (T
C
= 100°C)
8.2 A
I
DM
Drain Current - Pulsed
(Note 1)
46.4 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
230 mJ
I
AR
Avalanche Current
(Note 1)
11.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.3 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
53 W
- Derate Above 25°C 0.36 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 300 °C
Symbol Parameter FQPF16N15 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.78
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5

Summary of content (8 pages)