Datasheet

November 2013
FQPF16N25C — N-Channel QFET
®
MOSFET
©2004 Fairchild Semiconductor Corporation
FQPF16N25C Rev. C1
www.fairchildsemi.com
1
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQPF16N25C Unit
V
DSS
Drain to Source Voltage 250
V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 15.6 *
A
- Continuous (T
C
= 100
o
C) 9.8 *
A
I
DM
Drain Current - Pulsed (Note 1) 62.4 *
A
V
GSS
Gate to Source Voltage ± 30
V
E
AS
Single Pulsed Avalanche Energy (Note 2) 410
mJ
I
AR
Avalanche Current (Note 1) 15.6
A
E
AR
Repetitive Avalanche Energy (Note 1) 13.9
mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 5.5
V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 43
W
- Derate Above 25
o
C0.34
W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
°C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
°C
Symbol Parameter
FQPF16N25C
Unit
R
θJC
Thermal Resistance, Junction to Case, Max
2.89 °C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max 62.5 °C/W
*Drain current limited by maximum junction temperature
FQPF16N25C
N-Channel QFET
®
MOSFET
250 V, 15.6 A, 270 mΩ
Features
• 15.6 A, 250 V, R
DS(on)
= 270 m (Max) @ V
GS
= 10 V,
I
D
= 7.8 A
• Low Gate Charge (Typ. 41 nC)
• Low Crss (Typ. 68 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
TO-220F
G
D
S
G
S
D