Datasheet

FQPF22P10
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQPF22P10 Unit
V
DSS
Drain-Source Voltage -100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-13.2 A
- Continuous (T
C
= 100°C)
-9.3 A
I
DM
Drain Current - Pulsed
(Note 1)
-52.8 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
710 mJ
I
AR
Avalanche Current
(Note 1)
-13.2 A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
45 W
- Derate above 25°C 0.3 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max
Unit
R
θJC
Thermal Resistance, Junction-to-Case -- 3.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
S
D
G
FQPF22N10 P-Channel MOSFET
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
-13.2 A, -100 V, R
DS(on)
=125 mΩ(Max.) @V
GS
=-10 V, I
D
=-6.6 A
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 160 pF)
100% Avalanche Tested
March 2013
P-Channel QFET
®
MOSFET
-100 V, -13.2 A, 125 mΩ
175°C Maximum Junction Temperature Rating
TO-220F
G D
S
©2002 Fairchild Semiconductor Corporation
FQPF22P10 Rev. C0
www.fairc
hildsemi.com

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