Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF27P06, MOSFET

FQPF27P06

Thermal Characteristics

Symbol Parameter FQPF27P06 Unit

DSS

Drain-Source Voltage -60 V

Drain Current

- Continuous (T

= 25°C)

-17 A

- Continuous (T

= 100°C)

-12 A

Drain Current - Pulsed

(Note 1)

-68 A

GSS

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

(Note 2)

560 mJ

Avalanche Current

(Note 1)

-17 A

Repetitive Avalanche Energy

(Note 1)

4.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-7.0 V/ns

Power Dissipation (T

= 25°C)

47 W

- Derate above 25°C 0.31 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max

Unit

θJC

Thermal Resistance, Junction-to-Case -- 3.19 °C/W

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

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FQPF27P06 P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor

’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

•

-17 A, -60 V, R

DS(on)

=26 mΩ(Max.) @V

=-10 V, I

=-8.5 A

•

Low Gate Charge (Typ. 33 nC)

•

Low Crss (Typ. 120 pF)

•

100% Avalanche Tested

March 2013

P-Channel QFET

MOSFET

-60 V, -17 A, 26 mΩ

•

175°C Maximum Junction Temperature Rating

Absolute Maximum Ratings

= 25°C unless otherwise noted

TO-220F

G D

FQPF27P06 Rev. C0

www.fairc

hildsemi.com

Summary of content (8 pages)

PAGE 1
FQPF27P06 P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -60 -- -- V -- -0.
PAGE 3
VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V 1 10 1 10 -I D , Drain Current [A] -I D, Drain Current [A] Top : 0 10 175℃ 0 25℃ 10 -55℃ ※ Notes : 1. VDS = -30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.24 0.16 VGS = - 10V 0.12 VGS = - 20V 0.08 0.
PAGE 4
(Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -13.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs.
PAGE 5
FQPF27P06 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2001 Fairchild Semiconductor Corporation FQPF27P06 Rev.
PAGE 6
FQPF27P06 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2001 Fairchild Semiconductor Corporation FQP
PAGE 7
FQPF27P06 P-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.