Datasheet

0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
V
DS
= -30V
V
DS
= -48V
※
Note : I
D
= -27 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
10
-1
10
0
10
1
175
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.00
0.04
0.08
0.12
0.16
0.20
0.24
※
Note : T
J
= 25
℃
V
GS
= - 20V
V
GS
= - 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
-I
D
, Drain Current [A]
246810
10
-1
10
0
10
1
175
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= -30V
2. 250
μ
s Pulse Test
-I
D
, Drain Current [A]
-V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
FQPF27P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQPF27P06 Rev. C0
www.fairc
hildsemi.com