Datasheet

December 2013
Thermal Characteristics
FQP2N60C / FQPF2N60C
N-Channel QFET
®
MOSFET
600 V, 2 A, 4.7
Description
©2003 Fairchild Semiconductor Corporation
FQP2N60C / FQPF2N60C Rev. C1
www.fairchildsemi.com
1
FQP2N60C / FQPF2N60C N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
2 A, 600 V, R
DS(on)
= 4.7 (Max.) @ V
GS
= 10 V,
I
D
= 1 A
Low Gate Charge (Typ. 8.5 nC)
Low Crss (Typ. 4.3 pF)
100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Symbol Parameter FQP2N60C FQPF2N60C Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.32 5.5
°C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ, Max.
0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5 62.5 °C/W
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
Symbol Parameter FQP2N60C FQPF2N60C Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
2.0 2.0 * A
- Continuous (T
C
= 100°C)
1.35 1.35 * A
I
DM
Drain Current - Pulsed
(Note 1)
8 8 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
120 mJ
I
AR
Avalanche Current
(Note 1)
2.0 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
54 23 W
- Derate above 25°C 0.43 0.18 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 °C
* Drain current limited by maximum junction temperature.

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