Datasheet

November 2013
FQPF30N06L
N-Channel QFET
®
MOSFET
60 V, 22.5 A, 35 mΩ
Description
FQPF30N06L — N-Channel QFET
®
MOSFET
©2001 Fairchild Semiconductor Corporation
FQPF30N06L Rev. C1
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-220F
G
D
S
G
S
D
•
22.5 A, 60 V, R
DS(on)
= 35 mΩ (Max.) @ V
GS
=10 V,
I
D
= 11.3 A
•
Low Gate Charge (Typ. 15 nC)
•
Low Crss (Typ. 50 pF)
•
100% Avalanche Tested
•
175°C Maximum Junction Temperature Rating
Thermal Characteristics
Symbol Parameter FQPF30N06L Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
22.5 A
- Continuous (T
C
= 100°C)
15.9 A
I
DM
Drain Current - Pulsed
(Note 1)
90 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
350 mJ
I
AR
Avalanche Current
(Note 1)
22.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
3.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
38 W
- Derate above 25°C 0.25 W/°C
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 °C
Symbol Parameter
FQPF30N06L Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max.
3.9 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5 °C/W