Datasheet

FQPF47P06 / FQPF47P06YDTU
Thermal Characteristics
Symbol Parameter FQPF47P06 / FQPF47P06YDTU Unit
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-30
A
- Co
ntinuous (T
C
= 100°C)
-21.2
A
I
DM
Drain Current - Pulsed
(Note 1)
-120 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
820 mJ
I
AR
Avalanche Current
(Note 1)
-30 A
E
AR
Repetitive Avalanche Energy
(Note 1)
6.2 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
62
W
-
Derate above 25°C 0.41
W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
S
ymbol Parameter Typ Max
Unit
R
θJC
Thermal Resistance, Junction-to-Case -- 2.42 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
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FQPF47P06 / FQPF47P06YDTU P-Channel MOSFET
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
•
-30 A, -60 V, R
DS(on)
=26 mΩ(Max.) @V
GS
=-10 V, I
D
=-15 A
•
Low Gate Charge (Typ. 84 nC)
•
Low Crss (Typ. 320 pF)
•
100% Avalanche Tested
March 2013
P-Channel QFET
®
MOSFET
•
175°C Maximum Junction Temperature Rating
-60 V, -30 A, 26 mΩ
©2001 Fairchild Semiconductor Corporation
FQPF47P06 / FQPF47P06YDTU Rev. C0
www.fairc
hildsemi.com
Absolute Maximum Ratings T
C
=
25°C unless otherwise noted
TO-220F
G D
S