Datasheet

FQPF6N80T — N-Channel QFET
®
MOSFET
©2002 Fairchild Semiconductor Corporation
FQPF6N80T Rev. C1
www.fairchildsemi.com
4
Typical Characteristics (continued)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※ Notes :
1. Z
θ JC
(t) = 2.45 /W Max.℃
2. D uty F ac tor, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ JC
(t), Thermal Response
t
1
, S q uare W ave P ulse D ura tion [se c]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
, Drain Current [A]
T
C
, Case Temperature [ ]℃
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100μ s
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS
= 10 V
2. I
D
= 2.9 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Not es :
1. V
GS
= 0 V
2. I
D
= 250 μA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Z
θJC
(t), Thermal Response [
o
C/W]