Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF7N65C, MOSFET

FQPF7N65C — N-Channel QFET

MOSFET

Absolute Maximum Ratings

= 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter

FQPF7N65C / FQPF7N65CYDTU

Unit

DSS

Drain-Source Voltage 650 V

Drain Current

- Continuous (T

= 25°C)

7 *

- Continuous (T

= 100°C)

4.2 *

Drain Current - Pulsed

(Note 1)

28 *

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

212 mJ

Avalanche Current

(Note 1)

7 A

Repetitive Avalanche Energy

(Note 1)

1.6 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

0.42

W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

2.4

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5

°C/W

TO-220F

●

●●

●

●●

●

●●

●

▲

▲▲

▲

◀

◀◀

◀

●

●●

●

●●

●

●●

●

▲

▲▲

▲

◀

◀◀

◀

August 2013

FQPF7N65C

N-Channel QFET

MOSFET

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor

’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC),

and electronic lamp ballasts.

•

7 A, 650 V, R

DS(on).

= 1.4 Ω (Max.) @ V

= 10 V, I

= 3.5 A

•

Low Gate Charge (Typ. 28 nC)

•

Low C

rss

(Typ. 12 pF)

•

100% Avalanche Tested

Description

650 V, 7 A, 1.4 Ω

FQPF7N65C Rev. C1

www.fairc

hildsemi.com

TO-220F

Y-formed

FQPF7N65C / FQPF7N65CYDTU

Summary of content (9 pages)

PAGE 1
FQPF7N65C N-Channel QFET® MOSFET 650 V, 7 A, 1.4 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQPF7N65C Device FQPF7N65C FQPF7N65C FQPF7N65CYDTU Electrical Characteristics Symbol Package TO-220F Reel Size - Tape Width - Quantity 50 - - 50 TO-220F (Y-formed) TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 650 -- -- V -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom: 5.0 V Top : ID, Drain Current [A] 10 1 10 ID, Drain Current [A] 1 0 10 o 150 C o 0 10 -55 C o 25 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 -1 10 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.
PAGE 4
(Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -100 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 -50 0 150 200 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8.
PAGE 5
FQPF7N65C — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FQPF7N65C — N-Channel QFET® MOSFET Figure 15.
PAGE 7
FQPF7N65C — N-Channel QFET® MOSFET Mechanical Dimensions TO-220F Figure 16. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
FQPF7N65C — N-Channel QFET® MOSFET Mechanical Dimensions TO-220F (Y-formed) Figure 17. TO-220F 3L - TO220, Molded, 3LD, Full Pack, EIAJ SC91, Y formed lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.