Datasheet

©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
www.fairchildsemi.com
3
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET
®
MOSFET
 !
040 121620
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
※
Note : T
J
= 25
℃
R
DS( ON)
[
Ω
],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
DR
, Reverse Drai n Current [A]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
22 810
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
※
Notes :
1. V
DS
= 50V
2. 250
μ
s Pulse Test
I
D
, Drain Current [A]
4
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
V
DS
, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
gd
ds
C = C + C
gd
C
rs
os
s
s
=
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
010 3040
0
2
4
6
8
10
12
V
DS
= 400V
V
DS
= 160V
V
DS
= 640V
※
Note : I
D
= 8A
V
GS
, Gate-Source Voltage [V]
20
Q
G
, Total Gate Charge [nC]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
6
8