Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQPF9N25C, MOSFET

November 2013

FQPF9N25C / FQPF9N25CT — N-Channel QFET

MOSFET

FQPF9N25C / FQPF9N25CT Rev. C1

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FQPF9N25C / FQPF9N25CT Unit

DSS

Drain to Source Voltage 250

Drain Current

- Continuous (T

= 25

C) 8.8 *

- Continuous (T

= 100

C) 5.6 *

Drain Current - Pulsed (Note 1) 35.2 *

GSS

Gate to Source Voltage ± 30

Single Pulsed Avalanche Energy (Note 2) 285

Avalanche Current (Note 1) 8.8

Repetitive Avalanche Energy (Note 1) 7.4

dv/dt Peak Diode Recovery dv/dt

(Note 3) 5.5

V/ns

Power Dissipation

= 25

C) 38

- Derate Above 25

C0.3

W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol Parameter

FQPF9N25C / FQPF9N25CT

Unit

θJC

Thermal Resistance, Junction to Case, Max.

3.29

°C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Drain current limited by maximum junction temperature

FQPF9N25C / FQPF9N25CT

N-Channel QFET

MOSFET

250 V, 8.8 A, 430 mΩ

Features

• 8.8 A, 250 V, R

DS(on)

= 430 m (Max.) @ V

= 10 V,

= 4.4 A

• Low Gate Charge (Typ. 26.5 nC)

• Low Crss (Typ. 45.5 pF)

• 100% Avalanche Tested

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switching DC/DC converters, switch mode power

supplies, DC-AC converters for uninterrupted power supplies

and motor controls.

TO-220F

Summary of content (8 pages)

PAGE 1
FQPF9N25C / FQPF9N25CT N-Channel QFET® MOSFET 250 V, 8.8 A, 430 mΩ Features Description • 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
PAGE 2
Device Marking FQPF9N25C Device FQPF9N25C Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units FQPF9N25CT FQPF9N25CT TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 o -55 C 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.4 A 0.5 0.0 -100 200 -50 0 o Figure 8. On-Resistance Variation vs Temperature 10 μs 8 100 μs 1 10 1 ms 10 ms DC 0 200 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 150 o Figure 7.
PAGE 5
0KΩ 200nF 12V FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 6
FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FQPF9N25C / FQPF9N25CT — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.