Datasheet

December 2013
©2005 Fairchild Semiconductor Corporation
FQPF9N50CF Rev C1
www.fairchildsemi.com
1
FQPF9N50CF
N-Channel QFET
®
FRFET
®
MOSFET
500 V, 9 A, 850 mΩ
Description Features
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Thermal Characteristics
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
9 A, 500 V, R
DS(on)
= 850 mΩ (Max.) @ V
GS
= 10 V, I
D
= 4.5 A
•
Low Gate Charge (Typ. 28 nC)
•
Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
FQPF9N50CF — N-Channel QFET
®
FRFET
®
MOSFET
Symbol Parameter
FQPF9N50CF
Unit
R
θJC
Thermal Resistance, Junction to Case, Max.
2.86
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max.
62.5
•
Fast Recovery Body Diode (Typ. 100 ns)
TO-220F
G
D
S
G
S
D
Symbol Parameter FQPF9N50CF Unit
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current 9* A- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C) 5.4* A
I
DM
Drain Current - Pulsed
(Note 1)
36* A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
360 mJ
I
AR
Avalanche Current
(Note 1)
9A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 44 W
- Derate above 25°C 0.35 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
300 °C
* Drain current limited by maximum junction temperature