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March 2013
FQS4901
N-Channel QFET
®
MOSFET
400 V, 0.45 A, 4.2 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and
to provide superior
switching performance and high avalanche energy
strength. These devices are
suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
0.45 A, 400 V, R
DS(on)
=4.2 Ω(Max.)@V
GS
=10 V, I
D
=0.225 A
•
Low Gate Charge (Typ. 5.8 nC)
•
Low C
rss
(Typ. 5 pF)
•
100% Avalanche Tested
FQS4901 N-Channel MOSFET
www.fairchildsemi.com
©2000 Fairchild Semiconductor Corporation
FQS4901 Rev. C0