Datasheet

!
!
"
!
!
!
!
!
"
!
!
!
!
!
"
!
!
!
!
!
"
!
!
!



  
   
*

* )%% *
5

            
2

,.)73
% &' (
2

,'%73
% .&4 (
5

   8    

0 49 (
*

:* ±.) *
!6 8;+!!6

4 ) *6
8

82

,.)73
. % <

2

,'%73
0 & <




+ ))=0)% 7
   

+
θ

+>("  -. ) 7<








?0
March 2013
FQS4903
N-Channel QFET
®
MOSFET
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been
especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
•
0.37 A, 500 V, R
DS(on)
=6.2 Ω(Max.)@V
GS
=10 V, I
D
=0.185 A
•
Low Gate Charge (Typ. 6.3 nC)
•
Low C
rss
(Typ. 4.5 pF)
•
100% Avalanche Tested
FQS4903 N-Channel MOSFET
500 V, 0.37 A, 6.2 Ω
Description
www.fairchildsemi.com
©2000 Fairc
hild Semiconductor Corporation
FQS4903 Rev. C0