Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQT13N06LTF, MOSFET

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT13N06L Unit

DSS

Drain-Source Voltage 60 V

Drain Current

- Continuous (T

= 25°C)

2.8 A

- Continuous (T

= 70°C)

2.24 A

Drain Current - Pulsed

(Note 1)

11.2 A

GSS

Gate-Source Voltage ± 20 V

Single Pulsed Avalanche Energy

(Note 2)

85 mJ

Avalanche Current

(Note 1)

2.8 A

Repetitive Avalanche Energy

(Note 1)

0.21 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

7.0 V/ns

Power Dissipation (T

= 25°C)

2.1 W

- Derate above 25°C 0.017 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max

Unit

θJA

Thermal Resistance, Junction-to-Ambient * -- 60 °C/W

SOT-223

* When mo

unted on the minimum pad size recommended (PCB Mount)

FQT13N06L

FQT13N06L N-Channel MOSFET

Description

This N

-Channel enhancement mode powe

r M

OSFET

is produced using Fairchild Semiconduc

tor

’s

proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially

tailored to reduce on-state resistance, and to provide

superior switching performance and high avalanche

energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC

motor control, and variable s

witching

power

applications.

Features

•

2.8 A, 60 V, R

DS(on)

=140 mΩ(Max.) @V

=10 V, I

=1.4 A

•

Low Gate Charge (Typ. 4.8 nC)

•

Low Crss (Typ. 17 pF)

•

100% Avalanche Tested

March 2013

N-Channel QFET

MOSFET

60 V, 2.8 A, 140 mΩ

01 Fairchild Semiconductor Corporation

FQT13N06L

Rev. C0

www.fairc

hildsemi.com

Summary of content (8 pages)

PAGE 1
FQT13N06L N-Channel QFET® MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.
PAGE 3
1 1 10 VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 10 ID, Drain Current [A] ID, Drain Current [A] Top : 0 10 150℃ 25℃ 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test -55℃ -1 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics Figure 1.
PAGE 4
(Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.5 1.0 1.0 ※ Note : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 ※ Note : 1. VGS = 10 V 2. ID = 1.4 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.
PAGE 5
FQT13N06L N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 12V Qg 5V 200nF 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.
PAGE 6
FQT13N06L N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveform DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation FQT13N06L Rev. C0 www.
PAGE 7
FQT13N06L N-Channel MOSFET Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP ©2001 Fairchild Semiconductor Corporation FQT13N06L Rev. C0 0.70 ±0.10 (0.95) 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ www.fairchildsemi.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.