Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQT13N06TF, MOSFET

FQT13N06

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT13N06 Unit

DSS

Drain-Source Voltage 60 V

Drain Current

- Continuous (T

= 25°C)

2.8 A

- Continuous (T

= 70°C)

2.24 A

Drain Current - Pulsed

(Note 1)

11.2 A

GSS

Gate-Source Voltage ± 25 V

Single Pulsed Avalanche Energy

(Note 2)

85 mJ

Avalanche Current

(Note 1)

2.8 A

Repetitive Avalanche Energy

(Note 1)

0.21 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

7.0 V/ns

Power Dissipation (T

= 25°C)

2.1 W

- Derate above 25°C 0.017 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max

Unit

θJA

Thermal Resistance, Junction-to-Ambient * -- 60 °C/W

SOT-223

* When mounted on the m

inimum pad size recommended (PCB Mount)

FQT13N06 N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET

is produced using Fairchild Semiconductor

’s

proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially

tailored to reduce on-state resistance, and to provide

superior switching performance and high avalanche

energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC

motor control, and variable switching power

applications.

Features

•

2.8 A, 60 V, R

DS(on)

=140 mΩ(Max.) @V

=10 V, I

=1.4 A

•

Low Gate Charge (Typ. 5.8 nC)

•

Low Crss (Typ. 15 pF)

•

100% Avalanche Tested

March 2013

N-Channel QFET

MOSFET

60 V, 2.8 A, 140 mΩ

2 Fairchild

Semic

onductor Corporation

T13N06

Rev.

www.fairc

ldsemi.c

Summary of content (8 pages)

PAGE 1
FQT13N06 N-Channel QFET® MOSFET 60 V, 2.8 A, 140 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 60 -- -- V -- 0.
PAGE 3
FQT13N06 N-Channel MOSFET Typical Characteristics 1 10 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : 150℃ 0 10 25℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test -55℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics Figure 1.
PAGE 4
(Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 1.4 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.
PAGE 5
FQT13N06 N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveform BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2002 Fairchild Semiconductor Corporation FQT13N06 Rev.
PAGE 6
FQT13N06 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2002 Fairchild Semiconductor Corporation FQT13N06 Rev.
PAGE 7
FQT13N06 N-Channel MOSFET Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 0.70 ±0.10 (0.95) 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation FQT13N06 Rev. C0 www.fairchildsemi.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.