Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQT3P20TF, MOSFET

October 2013

FQT3P20

Rev. C0

www.fairchildsemi.com

P-Channel QFET

MOSFET

-200 V, -0.67 A, 2.7 Ω

FQT3P20 — P-Channel QFET

MOSFET

FQT3P20

Description

This P-Channel enhancement mode power MOSFE

T is

produced

using

Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and

high avalanche energy

strength. These devices are suitable for switched mode

power supplies, audio amplifier, DC motor control, and

variable switching power applications.

Features

•

-0.67 A, -200 V, R

DS(on)

= 2.7 Ω (Max.) @V

= 10 V,

= 0.335 A

• Low Gate Charge ( Typ. 6.0 nC)

•

Low Crss ( Typ. 7.5 pF)

Absolute Maximum Ratings T

= 25°C unles

s otherwise noted.

Thermal Characteristics

Symbol Parameter

FQT3P20TF Unit

DSS

Drain-Source Voltage -200 V

-0.67 ADrain Current

- Continuous (T

= 25°C)

- Continuous (T

= 70°C)

-0.53 A

Drain Current - Pulsed

(Note 1)

-2.7 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

150 mJ

Avalanche Current

(Note 1)

-0.67 A

Repetitive Avalanche Energy

(Note 1)

0.25 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-5.5 V/ns

Power Dissipation (T

= 25°C)

2.5 W

- Derate above 25°C 0.02 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

FQT3P20TF

Unit

θJA

Thermal Resistance, Junction-to-Ambient

50 °C/W

SOT-223

Summary of content (8 pages)

PAGE 1
FQT3P20 P-Channel QFET® MOSFET -200 V, -0.67 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQT3P20 Device FQT3P20TF Electrical Characteristics Symbol Package SOT-223 Reel Size 13" Tape Width 12 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Unit -200 -- -- V -- -0.
PAGE 3
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : -ID, Drain Current [A] 0 10 -ID , Drain Current [A] 0 10 -1 10 150℃ 25℃ -55℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 8 6 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -0.335 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 0.
PAGE 5
FQT3P20 — P-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 200nF 12V VGS Same Type as DUT 50KΩ Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA IG = const. Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT VGS -10V VDS 90% Figure 14.
PAGE 6
FQT3P20 — P-Channel QFET® MOSFET Figure 15.
PAGE 7
FQT3P20 — P-Channel QFET® MOSFET Mechanical Dimensions SOT-223 4L Figure 16. Molded Package, SOT-223, 4 Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.