Datasheet

FQT7N10L
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQT7N10L Unit
V
DSS
Drain-Source Voltage 100 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
1.7 A
- Continuous (T
C
= 70°C)
1.36 A
I
DM
Drain Current - Pulsed
(Note 1)
6.8 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
50 mJ
I
AR
Avalanche Current
(Note 1)
1.7 A
E
AR
Repetitive Avalanche Energy
(Note 1)
0.2 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
6.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
2.0 W
- Derate above 25°C 0.016 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max
Unit
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
!
"
!
!
!
"
"
"
!
"
!
!
!
"
"
"
S
D
G
SOT-223
G
D
S
FQT7N10L N-Channel MOSFET
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor
®
’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
1.7 A, 100 V, R
DS(on)
=350 mΩ(Max.) @V
GS
=10 V, I
D
=0.85 A
Low Gate Charge (Typ. 5.8 nC)
Low Crss (Typ. 10 pF)
100% Avalanche Tested
March 2013
N-Channel QFET
®
MOSFET
100 V, 1.7 A, 350 mΩ
©2001 Fairchild Semiconductor Corporation
FQT7N10L Rev. C0
www.fairc
hildsemi.com

Summary of content (8 pages)