Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQU11P06TU, MOSFET

Januray 2014

Thermal Characteristics

FQD11P06 / FQU11P06

P-Channel QFET

MOSFET

-60 V, -9.4 A, 185 mΩ

Description

www.fairchildsemi.com

FQD11P06 / FQU11P06 — P-Channel QFET

MOSFET

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, audio amplifier,

DC motor control, and variable switching power applications..

Features

•

-9.4 A, -60 V, R

DS(on)

= 185 mΩ (Max.) @ V

= -10 V,

= -4.7 A

•

Low Gate Charge (Typ. 13 nC)

•

Low Crss (Typ. 45 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Symbol Parameter

FQD11P06TM / FQU11P06TU Unit

DSS

Drain-Source Voltage -60 V

Drain Current

- Continuous (T

= 25°C)

-9.4 A

- Continuous (T

= 100°C)

-5.95 A

Drain Current - Pulsed

(Note 1)

-37.6 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

160 mJ

Avalanche Current

(Note 1)

-9.4 A

Repetitive Avalanche Energy

(Note 1)

3.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-7.0 V/ns

Power Dissipation (T

= 25°C) *

2.5 W

Power Dissipation (T

= 25°C)

38 W

- Derate above 25°C 0.3 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering,

1/8" from case for 5 seconds

300 °C

Symbol Parameter

FQD11P06TM /

FQU11P06TU

Unit

JC

Thermal Resistance, Junction to Case, Max.

3.28

C/W

JA

Thermal Resistance, J

unction to Ambi

ent (

inimum

of 2

oz Copper), Max.

110

Thermal Resistance, Junction to Ambient (*1 in

Pad of 2-oz Copper), Max.

uctor Corporation

FQD11P06 / FQU11P06 Rev. C2

I-PAK

D-PAK

Summary of content (9 pages)

PAGE 1
FQD11P06 / FQU11P06 P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Part Number FQD11P06TM Top Mark FQD11P06 Package D-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU11P06TU FQU11P06 I-PAK Tube N/A N/A 70 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -60 -- -- V -- -0.
PAGE 3
VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : -ID, Drain Current [A] 1 10 -ID , Drain Current [A] 1 10 0 10 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = -30V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 10 8 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.
PAGE 4
(Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -4.7 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs.
PAGE 5
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT 50KΩ 50K Ω Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13.
PAGE 6
VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod se W idth Gate Pul uls D = -------------------------Gate te Pu Ga Pullse Per Period 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo
PAGE 7
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 17. TO251 (I-PAK), Molded, 3-Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.