Datasheet

FQD13N06L / FQU13N06L — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com
3
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20 64 810
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
※
Not e : I
D
= 13.6A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
gd
ds
C
oss
= C + C
gd
C
rss
=
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
-1
10
0
10
1
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
0 01 203040
0
100
200
300
V
GS
= 10V
V
GS
= 5V
※
Not e : T
J
= 25
℃
R
DS(ON)
[m
Ω
],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0246810
10
-1
10
0
10
1
150
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 25V
2. 250
μ
s Pulse Test
I
D
, Drain Current [A]
10
-1
10
0
10
1
10
0
10
1
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
V
GS
, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
V
DS
, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics