Datasheet

April 2014
©2001 Fairchild Semiconductor Corporation
FQD17P06 / FQU17P06 Rev C3
www.fairchildsemi.com
1
FQD17P06 / FQU17P06
P-Channel QFET
®
MOSFET
-60 V, -12 A, 135
Description Features
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted.
Thermal Characteristics
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
-12 A, -60 V, R
DS(on)
= 135 m (Max.) @ V
GS
= -10 V, I
D
= -6 A
Low Gate Charge (Typ. 21 nC)
Low Crss (Typ. 80 pF)
100% Avalanche Tested
Symbol Parameter
FQD17P06 / FQU17P06
Unit
V
DSS
Drain-Source Voltage -60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
-12 A
- Continuous (T
C
= 100°C)
-7.6 A
I
DM
Drain Current - Pulsed
(Note 1)
-48 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300 mJ
I
AR
Avalanche Current
(Note 1)
-12 A
E
AR
Repetitive Avalanche Energy
(Note 1)
4.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
-7.0 V/ns
P
D
Power Dissipation (T
A
= 25°C) *
2.5 W
Power Dissipation (T
C
= 25°C)
44 W
- Derate above 25°C 0.35 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds.
300 °C
Symbol Parameter
FQD17P06 / FQU17P06
Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 2.85
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
R
θJA
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max. 50
* When mounted on the minimum pad size recommended (PCB Mount)
FQD17P06 / FQU17P06 P-Channel QFET
®
MOSFET
G
D
S
I-PAK
D-PAK
G
S
D
G
S
D

Summary of content (9 pages)