Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFQU2N100TU, MOSFET

October 2013

FQD2N100 / FQU2N100 — N-Channel QFET

MOSFET

www.fairchildsemi.com

Thermal Characteristics

Symbol Parameter Unit

JC

Thermal Resistance, Junction to Case, Max. 2.5

C/W

JA

110

FQD2N100 / FQU2N100

N-Channel QFET

MOSFET

1000 V, 1.6 A, 9 Ω

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

Features

•

1.6 A, 1000 V, R

DS(on)

= 9 Ω (Max.)@ V

= 10 V,

= 0.8 A

•

Low Gate Charge ( Typ. 12 nC)

•

Low Crss ( Typ. 5 pF)

•

100% Avalanche Tested

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter

FQD2N100TM / FQU2N100TU Unit

DSS

Drain-Source Voltage 1000 V

Drain Current

- Continuous (T

= 25°C)

1.6 A

- Continuous (T

= 100°C)

1.0 A

Drain Current - Pulsed

(Note 1)

6.4 A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

160 mJ

Avalanche Current

(Note 1)

1.6 A

Repetitive Avalanche Energy

(Note 1)

5.0 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

5.5 V/ns

Power Dissipation (T

= 25°C) *

2.5 W

Power Dissipation (T

= 25°C)

50 W

- Derate above 25°C 0.4 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

• RoHS Compliant

FQD2N100TM

FQU2N100TU

I-PAK

D-PAK

FQD2N100 / FQU2N100 Rev. C0

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (* 1 in

pad of 2 oz copper), Max.

Summary of content (9 pages)

PAGE 1
FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
PAGE 2
Device Marking FQD2N100 Device FQD2N100TM FQU2N100 FQU2N100TU Electrical Characteristics Symbol Package DPAK Reel Size Tape Width 16 mm 330 mm IPAK - Quantity 2500 - 70 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 1000 -- -- V -- 0.
PAGE 3
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 -2 10 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics VGS , Gate-Source Voltage [V] 8 10 Figure 2.
PAGE 4
(Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250µA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.
PAGE 5
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14.
PAGE 6
DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2004 Fairchild Semiconductor Corporation FQD2N100 / FQU2N100 Rev. C0 6 www.fairchildsemi.
PAGE 7
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET Mechanical Dimensions TO-252 3L (DPAK) Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET Mechanical Dimensions TO-251 3L (IPAK) Figure 17. TO-251 (I-PAK) Molded, 3 Lead Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.