Datasheet

November 2013
Thermal Characteristics
Symbol Parameter
FQU5N40TU
Unit
R
JC
Thermal Resistance, Junction to Case, Max. 2.78
o
C/W
R
JA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
Thermal Resistance, Junction to Ambient (*1 in
2
Pad of 2-oz Copper), Max.
50
FQU5N40
N-Channel QFET
®
MOSFET
400 V, 3.4 A, 1.6 Ω
Description
©2000 Fairchild Semiconductor Corporation
FQU5N40 Rev. C3
www.fairchildsemi.com
1
FQU5N40 — N-Channel QFET
®
MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
G
D
S
I-PAK
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise
noted.
•
3.4 A, 400 V, R
DS(on)
= 1.6 Ω (Max.) @ V
GS
= 10 V,
I
D
= 1.7 A
•
Low Gate Charge (Typ. 10 nC)
•
Low C
rss
(Typ. 7 pF)
•
100% Avalanche Tested
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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
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