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Auto SPM

Fairchild Semiconductor Corporation

1 www.fairch

ildsemi.com

FTCO3V455A1 Rev

. C2

FTCO3V455A1 3-Phase Inverter Automotive Power Module

April 2013

FTCO3V455A1

3-Phase Inverter Automotive Power Module

General Description

The FTCO3V455A1 is a 40V low Rds(on) automotive qualified

Features

• 40V-150A 3-phase trench MOSFET inverter bridge

•

1% precision shunt current sensing

• Temperature sensing

• DBC substrate

• 100% lead free and RoHS compliant 2000/53/C directive.

power module featuring a 3-phase MOSFET inverter optimized

for 12V battery systems. It includes a precision shunt resistor for

current sensing an NTC for temperature sensing and an RC

snubber circuit.

The module utilizes Fairchild's trench MOSFET technology and

it is designed to provide a very compact and high performance

variable speed motor drive for applications like electric power

steering, electro-hydraulic power steering, electric water pumps,

electric oil pumps. The power module is 100% lead free, RoHS

and UL compliant.

Benefit

• Low junction-sink thermal resistance

•

Compact motor design

• Low inverter electrical resistance

• High current handling

• Highly integrated compact design

•

Better EMC and electrical isolation

•

Easy and reliable installation

• Improved overall system reliability

• UL94V-0 compliant

•

Isolation rating of 2500Vrms/min

• Mounting through screws

• Automotive qualified

Applications

• Electric and Electro-Hydraulic Power Steering

•

Electric Water Pump

• Electric Oil Pump

• Electric Fan

Absolute Maximum Ratings (T

= 25°C, Unless Ot

herwise Specified)

Symbol Parameter Rating Unit

(Q1~Q6) Dra

in to Source Voltage 40 V

(Q1~Q6) Gate to Source V

oltage ±20 V

(Q1~Q6

) Drain Current Continuous(T

C GS

= 10V) 150 A

(Q1~Q

6) Single Pulse Avalanche Energy (*Note 1) 947 mJ

Power dissip

ation 115 W

Maximum Juncti

on Temperature 175 °C

STG

Stor

age Temperature 125 °C

Figure 1.schematic

Figure 2. package

= 25°C, V

Summary of content (12 pages)

PAGE 1
Auto SPM FTCO3V455A1 ® 3-Phase Inverter Automotive Power Module General Description Features The FTCO3V455A1 is a 40V low Rds(on) automotive qualified power module featuring a 3-phase MOSFET inverter optimized for 12V battery systems. It includes a precision shunt resistor for current sensing an NTC for temperature sensing and an RC snubber circuit.
PAGE 2
FTCO3V455A1 3-Phase Inverter Automotive Power Module Pin Configuration Figure 3.
PAGE 3
VBAT VBAT SENSE GATE HS U GATE HS V GATE HS W PHASE U PHASE1 SENSE PHASE V PHASE2 SENSE PHASE W PHASE3 SENSE GATE L S U GATE L S V GATE LS W SHUNT P CSR SHUNT N GND TEMP 1 TEMP 2 Figure 4. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 3 www.fairchildsemi.
PAGE 4
FTCO3V455A1 3-Phase Inverter Automotive Power Module Flammability Information All materials present in the power module meet UL flammability rating class 94V-0 or higher. Solder Solder used is a lead free SnAgCu alloy. Compliance to RoHS The Power Module is 100% lead free and RoHS compiant with the 2000/53/C directive. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 4 www.fairchildsemi.
PAGE 5
Symbol Unless Otherwise Specified) Parameter Rating Unit VDS(Q1~Q6) Drain to Source Voltage 40 V VGS(Q1~Q6) Gate to Source Voltage ±20 V ID(Q1~Q6) Drain Current Continuous(TC = 25°C, V GS = 10V) 150 A EAS(Q1~Q6) Single Pulse Avalanche Energy (*Note 1) 947 mJ PD Power dissipation 115 W TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature 125 °C Thermal Resistance Symbol Min. Typ. Max. Unit Q1 Thermal Resistance J -C - 1.3 1.
PAGE 6
Symbol VTH Parameter D-S Breakdown Voltage (Inverter MOSFETs) Gate to Source Voltage (Inverter MOSFETs) Threshold Voltage (Inverter MOSFETs) VSD MOSFET Body Diode Forward Voltage BVDSS VGS RDS(ON)Q1 RDS(ON)Q2 RDS(ON)Q3 RDS(ON)Q4 RDS(ON)Q5 RDS(ON)Q6 IDSS IGSS Inverter High Side MOSFETs Q1 (See *Note3) Inverter High Side MOSFETs Q2 (See *Note3) Inverter High Side MOSFETs Q3 (See *Note3) Inverter Low Side MOSFETs Q4 (See *Note3) Inverter Low Side MOSFETs Q5 (See *Note3) Inverter Low Side MOSFETs Q6 (Se
PAGE 7
4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 If R = 0 10us tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 10 100 0.
PAGE 8
1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250μA 1.0 0.8 0.6 0.4 -80 0 40 80 120 160 -40 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FTCO3V455A1 Rev. C2 1.00 0.95 0.
PAGE 9
Parameter Limits Condition Device Flatness Note Fig.15 Mounting Screw: - M3, Recommended 0.7N.m Mounting Torque Unit Min. 0 Typ. - Max. +200 0.6 0.7 0.8 N.m - 20 - g Weight um 1 Fig. 15. Flatness Measurement Position Package Marking and Ordering Information Device Marking FTCO3V455A1 ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 MOSFET PCF33478 9 Packing Type Quantity Tube 11 www.fairchildsemi.
PAGE 10
FTCO3V455A1 3-Phase Inverter Automotive Power Module VBAT TEMP 1 TEMP 2 PHASE W SENSE GATE HS W GATE LS W PHASE V SENSE GATE HS V GATE LS V PHASE U SENSE VBAT SENSE GATE HS U GATE LS U SHUNT P SHUNT N Detailed Package Outline Drawings GND PHASE U PHASE V PHASE W Figure 16. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 10 www.fairchildsemi.
PAGE 11
FTCO3V455A1 3-Phase Inverter Automotive Power Module Detailed Package Outline Drawings Figure 17. ©2013 Fairchild Semiconductor Corporation FTCO3V455A1 Rev. C2 11 www.fairchildsemi.
PAGE 12
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