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H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3

September 2009

H11AA1M, H11AA2M, H11AA3M, H11AA4M

AC Input/Phototransistor Optocouplers

Features

■

Bi-polar emitter input

■

Built-in reverse polarity input protection

■

Underwriters Laboratory (UL) recognized File

#E90700, Volume 2

■

VDE approved File #102497 (ordering option ‘V’)

Applications

■

AC line monitor

■

Unknown polarity DC sensor

■

Telephone line interface

Description

The H11AAXM series consists of two gallium-arsenide

infrared emitting diodes connected in inverse parallel

driving a single silicon phototransistor output.

Schematic Package Outlines

5 COLL

4 EMITTER

BASE

Summary of content (10 pages)

PAGE 1
H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description ■ Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. 1.5 Unit EMITTER VF Input Forward Voltage IF = ±10mA All 1.17 CJ Capacitance VF = 0 V, f = 1.0MHz All 80 pF V DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.
PAGE 4
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 5
Fig. 2 Normalized CTR vs. Forward Current Fig. 1 Input Voltage vs. Input Current 100 1.4 TA = 25°C TA = 25°C VCE = 5V 80 Normalized to IF = 10mA 60 1.0 40 NORMALIZED CTR I F – INPUT CURRENT (mA) 1.2 20 0 -20 -40 0.8 0.6 0.4 -60 0.2 -80 0.0 -100 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 2.0 5 20 1.0 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) VCE = 5V Normalized to IF = 10mA, TA = 25°C 1.2 IF = 10mA NORMALIZED CTR 15 Fig. 4 CTR vs. RBE (Unsaturated) Fig. 3 Normalized CTR vs.
PAGE 6
Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 7 SWITCHING SPEED (µs) A NORMALIZED ton – (ton(RBE) / ton(open)) IF = 10mA VCC = 10V T = 25°C Toff 100 Tf 10 Ton Tr 1 VCC = 10V IC = 2mA RL = 100Ω T = 25°C 6 A 5 4 3 2 1 0 0.1 0.1 1 10 10 100 100 10000 100000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE 10000 3.0 VCC = 10V IC = 2mA RL = 100Ω T = 25°C 2.
PAGE 7
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 8
Option Order Entry Identifier (Example) No option H11AA1M S H11AA1SM SR2 H11AA1SR2M T H11AA1TM 0.4" Lead Spacing V H11AA1VM VDE 0884 TV H11AA1TVM VDE 0884, 0.
PAGE 9
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.
PAGE 10
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