Datasheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 3
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Electrical Characteristics (T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
*Typical values at T
A
= 25°C
Transfer Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= ±10mA All 1.17 1.5 V
C
J
Capacitance V
F
= 0 V, f = 1.0MHz All 80 pF
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0mA, I
F
= 0 All 30 100 V
BV
CBO
Collector to Base I
C
= 100µA, I
F
= 0 All 70 120 V
BV
EBO
Emitter to Base I
E
= 100µA, I
F
= 0 All 5 10 V
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0 H11AA1M
H11AA3M
H11AA4M
150nA
H11AA2M 1 200
C
CE
Capacitance Collector
to Emitter
V
CE
= 0, f = 1MHz All 10 pF
C
CB
Collector to Base V
CB
= 0, f = 1MHz All 80 pF
C
EB
Emitter to Base V
EB
= 0, f = 1MHz All 15 pF
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
CTR
CE
Current Transfer Ratio,
Collector to Emitter
I
F
= ±10mA, V
CE
= 10V H11AA4M 100 %
H11AA3M 50
H11AA1M 20
H11AA2M 10
Current Transfer Ratio,
Symmetry
I
F
= ±10mA, V
CE
= 10V
(Figure 11)
All .33 3.0
V
CE(SAT)
Saturation Voltage,
Collector to Emitter
I
F
= ±10mA, I
CE
= 0.5mA All .40 V
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
C
I-O
Package Capacitance
Input/Output
V
I-O
= 0, f = 1MHz 0.7 pF
V
ISO
Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω