Datasheet

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AG1M Rev. 1.0.3 2
H11AG1M — Phototransistor Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOTAL DEVICE
T
STG
Storage Temperature -55 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Lead Solder Temperature (Wave Solder) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
260 mW
3.5 mW/°C
EMITTER
I
F
Continuous Forward Current 50 mA
V
R
Reverse Voltage 6 V
I
F
(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A
P
D
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
75 mW
1.0 mW/°C
DETECTOR
P
D
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
150 mW
2.0 mW/°C
I
C
Continuous Collector Current 50 mA