Datasheet

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AG1M Rev. 1.0.3 3
H11AG1M — Phototransistor Optocoupler
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
*Typical values at T
A
= 25°C.
Isolation Characteristics
Transfer Characteristics (T
A
= 25°C Unless otherwise specified.)
*Typical values at T
A
= 25°C
Symbol Parameters Test Conditions Min. Typ.* Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 1mA 1.25 1.5 V
I
R
Reverse Leakage Current V
R
= 5V, T
A
= 25°C 10 µA
C
J
Capacitance V = 0, f = 1.0MHz 100 pF
DETECTOR
BV
CEO
Breakdown Voltage, Collector to Emitter I
C
= 1.0mA, I
F
= 0 30 V
BV
CBO
Collector to Base I
C
= 100µA, I
F
= 0 70 V
BV
ECO
Emitter to Collector I
C
= 100µA, I
F
= 0 7 V
I
CEO
Leakage Current, Collector to Emitter V
CE
= 10V, I
F
= 0 5 10 µA
C
CE
Capacitance V
CE
= 10V, f = 1MHz 10 pF
Symbol Parameter Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500
V
AC
PEAK
R
ISO
Isolation Resistance V
I-O
= 500VDC, T
A
= 25°C 10
11
Ω
Symbol Characteristics Test Conditions Min. Typ.* Max. Units
DC CHARACTERISTICS
CTR Current Transfer Ratio I
F
= 1mA, V
CE
= 5V 300 %
I
F
= 1mA, V
CE
= 0.6V 100
I
F
= 0.2mA, V
CE
= 1.5V 100
V
CE(SAT)
Saturation Voltage I
F
= 2.0mA, I
C
= 0.5mA .40 V
AC CHARACTERISTICS
Non-Saturated Switching Times
t
on
Tur n-On Time R
L
= 100 Ω , I
F
= 1mA, V
CC
= 5V 5 µs
t
off
Tur n-Off Time R
L
= 100 Ω , I
F
= 1mA, V
CC
= 5V 5 µs