Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 2
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
Storage Temperature -40 to +150 °C
T
OPR
Operating Temperature -40 to +100 °C
T
SOL
Wave Solder Temperature (see page 8 for reflow solder profiles) 260 for 10 sec °C
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250 mW
2.94 mW/°C
EMITTER
I
F
DC / Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 6 V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
120 mW
1.41 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
CBO
Collector-Base Voltage 70 V
V
ECO
Emitter-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150 mW
1.76 mW/°C