Datasheet

©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 3
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage (I
F
= 10mA) T
A
= 25°C 0.8 1.18 1.5 V
T
A
= -55°C 0.9 1.28 1.7
T
A
= 100°C 0.7 1.05 1.4
I
R
Reverse Leakage Current V
R
= 6.0V 10 µA
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0mA, I
F
= 0 70 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
F
= 0 70 120 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 100µA, I
F
= 0 7 10 V
I
CEO
Collector-Emitter Dark Current V
CE
= 10V, I
F
= 0 1 50 nA
I
CBO
Collector-Base Dark Current V
CB
= 10V 0.5 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz 8 pF
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTIC
CTR Current Transfer Ratio,
Collector to Emitter
I
F
= 10mA, V
CE
= 10V H11AV1M
H11AV1AM
100 300 %
H11AV2M
H11AV2AM
50
V
CE (SAT)
Collector-Emitter
Saturation Voltage
I
C
= 2mA, I
F
= 20mA All 0.4 V
AC CHARACTERISTIC
T
ON
Non-Saturated Turn-on
Time
I
C
= 2mA, V
CC
= 10V,
R
L
= 100 Ω (Fig. 11)
All 15 µs
T
ON
Non Saturated Turn-off
Time
I
C
= 2mA, V
CC
= 10V,
R
L
= 100 Ω (Fig. 11)
All 15 µs
Symbol Parameters Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 V
AC(pk)
C
ISO
Isolation Capacitance V
I-O
= 0V, f = 1MHz 0.2 2 pF
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω