Datasheet
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 3
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
*All Typical values at T
A
= 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage
(2)
I
F
= 10mA All 1.15 1.5 V
∆
V
F
∆
T
A
Forward Voltage
Temp. Coefficient
All -1.8 mV/°C
BV
R
Reverse Breakdown
Voltage
I
R
= 10µA All 6 25 V
C
J
Junction Capacitance V
F
= 0V, f = 1MHz All 50 pF
V
F
= 1V, f = 1MHz 65 pF
I
R
Reverse Leakage
Current
(2)
V
R
= 6V All 0.05 10 µA
DETECTOR
BV
CER
Breakdown Voltage
Collector to Emitter
(2)
R
BE
= 1M
Ω
, I
C
= 1.0mA, I
F
= 0 MOC8204M 400 V
H11D1M/2M 300
H11D3M 200
BV
CEO
No RBE, I
C
= 1.0mA 4N38M 80
BV
CBO
Collector to Base
(2)
I
C
= 100µA, I
F
= 0 MOC8204M 400 V
H11D1M/2M 300
H11D3M 200
4N38M 80
BV
EBO
Emitter to Base I
E
= 100µA, I
F
= 0 4N38M 7 V
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10 V
I
CER
Leakage Current
Collector to Emitter
(2)
(R
BE
= 1M
Ω
)
V
CE
= 300V, I
F
= 0, T
A
= 25°C MOC8204M 100 nA
V
CE
= 300V, I
F
= 0, T
A
= 100°C 250 µA
V
CE
= 200V, I
F
= 0, T
A
= 25°C H11D1M/2M 100 nA
V
CE
= 200V, I
F
= 0, T
A
= 100°C 250 µA
V
CE
= 100V, I
F
= 0, T
A
= 25°C H11D3M 100 nA
V
CE
= 100V, I
F
= 0, T
A
= 100°C 250 µA
I
CEO
No R
BE
, V
CE
= 60V, I
F
= 0,
T
A
= 25°C
4N38M 50 nA
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
EMITTER
CTR Current Transfer
Ratio, Collector to
Emitter
I
F
= 10mA, V
CE
= 10V,
R
BE
= 1M
Ω
H11D1M/2M/3M,
MOC8204M
2 (20) mA (%)
I
F
= 10mA, V
CE
= 10V 4N38M 2 (20)
V
CE(SAT)
Saturation Voltage
(2)
I
F
= 10mA, I
C
= 0.5mA,
R
BE
= 1M
Ω
H11D1M/2M/3M,
MOC8204M
0.1 0.40 V
I
F
= 20mA, I
C
= 4mA 4N38M 1.0
SWITCHING TIMES
t
ON
Non-Saturated
Tur n-on Time
V
CE
= 10V, I
CE
= 2mA,
R
L
= 100Ω
All 5
µs
t
OFF
Tur n-off Time
All 5
µs