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H11F1M, H11F2M, H11F3M — Photo FET Optocouplers

H11F1M, H11F2M, H11F3M Rev. 1.0.5

May 2012

H11F1M, H11F2M, H11F3M

Photo FET Optocouplers

Features

As a remote variable resistor:

■

≤

100

≥

300M

■

≤

15pF shunt capacitance

■

≥

100G

I/O isolation resistance

As an analog switch:

■

Extremely low offset voltage

■

60 V

pk-pk

signal capability

■

No charge injection or latch-up

■

UL recognized (File #E90700)

Applications

As a remote variable resistor:

■

Isolated variable attenuator

■

Automatic gain control

■

Active filter fine tuning/band switching

As an analog switch:

■

Isolated sample and hold circuit

■

Multiplexed, optically isolated A/D conversion

General Description

The H11FXM series consists of a Gallium-Aluminum-

Arsenide IRED emitting diode coupled to a symmetrical

bilateral silicon photo-detector. The detector is electri-

cally isolated from the input and performs like an ideal

isolated FET designed for distortion-free control of low

level AC and DC analog signals. The H11FXM series

devices are mounted in dual in-line packages.

Schematic Package Outlines

OUTPUT

TERM.

OUTPUT

TERM.

ANODE

CATHODE

Summary of content (11 pages)

PAGE 1
H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: ■ ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit 1.3 1.75 V 10 µA EMITTER VF Input Forward Voltage IF = 16mA All IR Reverse Leakage Current VR = 5V All CJ Capacitance V = 0 V, f = 1.
PAGE 4
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 5
Figure 1. Resistance vs. Input Current Figure 2. Output Characteristics I46 – OUTPUT CURRENT (μA) r(on) – NORMALIZED RESISTANCE 800 10 1 IF = 14mA 400 IF = 10mA IF = 6mA 200 IF = 6mA -200 IF = 10mA -400 IF = 14mA IF = 18mA -800 1 1 0 -0.2 100 -0.1 Figure 3. LED Forward Voltage vs. Forward Current 0.2 Figure 4. Off-state Current vs. Ambient Temperature I46 – NORMALIZED DARK CURRENT 1.8 VF – FOR WARD VOLTAGE (V) 0.1 10000 2.0 1.6 TA = -40°C TA = 25°C 1.2 1.0 0.
PAGE 6
As a Variable Resistor As an Analog Signal Switch ISOLATED SAMPLE AND HOLD CIRCUIT ISOLATED VARIABLE ATTENUATORS 500K + VIN VOUT VIN VIN 50 - VOUT VIN H11F1M H11F1M C IF IF IF VOUT H11F1M VOUT t IF LOW FREQUENCY HIGH FREQUENCY @1MHz DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA @10KHz DYNAMIC RANGE 70db FOR 0 ≤ IF ≤ 30mA Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C.
PAGE 7
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 8
Option Order Entry Identifier (Example) No option H11F1M S H11F1SM SR2 H11F1SR2M V H11F1VM TV H11F1TVM IEC60747-5-2 approval, 0.
PAGE 9
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 0.30 ± 0.05 4.0 ± 0.1 Ø1.5 MIN 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 0.1 MAX 10.1 ± 0.20 24.0 ± 0.3 Ø1.5 ± 0.1/-0 User Direction of Feed ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 www.fairchildsemi.
PAGE 10
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max.
PAGE 11
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers ©2007 Fairchild Semiconductor Corporation H11F1M, H11F2M, H11F3M Rev. 1.0.5 www.fairchildsemi.