Datasheet

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value
Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
EMITTER
I
F
Continuous Forward Current All 60 mA
V
R
Reverse Voltage All 5 V
I
F(pk)
Forward Current – Peak (10µs pulse, 1% duty cycle) All 1 A
P
D
LED Power Dissipation 25°C Ambient All 100 mW
Derate Linearly from 25°C 1.33 mW/°C
DETECTOR
P
D
Detector Power Dissipation @ 25°C All 300 mW
Derate linearly from 25°C 4.0 mW/°C
BV
4-6
Breakdown Voltage (either polarity) H11F1M,
H11F2M
±30 V
H11F3M ±15 V
I
4-6
Continuous Detector Current (either polarity) All ±100 mA