Datasheet
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 3
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
A
= 25°C
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 10mA All 1.3 1.50 V
∆
V
F
∆
T
A
Forward Voltage
Temp. Coefficient
All -1.8 mV/°C
BV
R
Reverse Breakdown
Voltage
I
R
= 10µA All 3.0 25 V
C
J
Junction Capacitance V
F
= 0V, f = 1MHz All 50 pF
V
F
= 1V, f = 1MHz 65
I
R
Reverse Leakage
Current
V
R
= 3.0V All 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0mA, I
F
= 0 H11G1M 100 V
H11G2M 80
H11G3M 55
BV
CBO
Collector to Base I
C
= 100µA H11G1M 100 V
H11G2M 80
H11G3M 55
BV
EBO
Emitter to Base All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 80V, I
F
= 0 H11G1M 100 nA
V
CE
= 60V, I
F
= 0 H11G2M
V
CE
= 30V, I
F
= 0 H11G3M
V
CE
= 80V, I
F
= 0, T
A
= 80°C H11G1M 100 µA
V
CE
= 60V, I
F
= 0, T
A
= 80°C H11G2M
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
EMITTER
CTR Current Transfer
Ratio, Collector to
Emitter
I
F
= 10mA, V
CE
= 1V H11G1M/2M 100 (1000) mA (%)
I
F
= 1mA, V
CE
= 5V H11G1M/2M 5 (500)
H11G3M
2 (200)
V
CE(SAT)
Saturation Voltage I
F
= 16mA, I
C
= 50mA H11G1M/2M 0.85 1.0 V
I
F
= 1mA, I
C
= 1mA H11G1M/2M 0.75 1.0
I
F
= 20mA, I
C
= 50mA H11G3M 0.85 1.2
SWITCHING TIMES
t
ON
Tur n-on Time
R
L
= 100
Ω
, I
F
= 10mA,
V
CE
= 5V, f
≤
30Hz,
Pulse Width
≤
300µs
All 5
µs
t
OFF
Tur n-off Time
All 100
µs
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
V
ISO
Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V
AC
PEAK
R
ISO
Isolation Resistance V
I-O
= 500 VDC All 10
11
Ω
C
ISO
Isolation Capacitance f = 1MHz All 0.2 pF