Datasheet

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File Number 4041.2

HGTG30N60C3D

63A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25

C and 150

C. The

IGBT used is the development type TA49051. The diode

used in anti-parallel with the IGBT is the development type

TA49053.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential.

Formerly Developmental Type TA49014.

Symbol

Features

• 63A, 600V at T

= 25

• Typical Fall Time . . . . . . . . . . . . . . . 230ns at T

= 150

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60C3D TO-247 G30N60C3D

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet January 2009

Summary of content (8 pages)

PAGE 1
HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
PAGE 2
HGTG30N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60C3D UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 63 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
HGTG30N60C3D Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Diode Reverse Recovery Time trr Thermal Resistance RθJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns IGBT - - 0.6 oC/W Diode - - 1.3 oC/W NOTE: 3.
PAGE 4
HGTG30N60C3D (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) 70 VGE = 15V 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 25 450 20 250 10 td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) VGE = 10V 50 40 VGE = 15V 20 20 30 40 50 200 tSC 150 5 10 100 11 15 14 VGE , GATE TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 400 VGE = 10V 200 100 10 60 FIGURE 7.
PAGE 5
HGTG30N60C3D 6.0 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 8.0 (Continued) 7.0 6.0 5.0 VGE = 10V 4.0 3.0 2.0 1.0 VGE = 15V 0 10 20 30 40 50 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10 60 ICE , COLLECTOR TO EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) 500 TJ = 150oC, TC = 75oC RG = 3Ω, L = 100µH 100 VGE = 15V fMAX1 = 0.
PAGE 6
HGTG30N60C3D Typical Performance Curves (continued) Collector Current, Ic [A] 500 10µs 100µs 100 1ms 10ms 10 DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 1000 Collector-Emitter Voltage, VCE [V] ZθJC , NORMALIZED THERMAL RESPONSE Figure 17. SOA Characteristics 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 0.
PAGE 7
HGTG30N60C3D Typical Performance Curves (continued) 200 60 50 tr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 100A/µs 100oC 10 150oC 1 0 0.5 25oC trr 40 30 ta 20 tb 10 2.0 1.0 1.5 VEC , FORWARD VOLTAGE (V) 2.5 0 3.0 1 Figure 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 5 10 IEC , FORWARD CURRENT (A) 30 Figure 20.
PAGE 8
HGTG30N60C3D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device.