Datasheet

©2004 Fairchild Semiconductor Corporation
HUF75344G3, HUF75344P3 Rev. C0
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . V
DGR
55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
75
Figure 4
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
285
1.90
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 55 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 50V, V
GS
= 0V - - 1 µA
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C--250µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Drain to Source On Resistance r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9) - 6.5 8.0 mΩ
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
θJC
(Figure 3) - - 0.52
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-247 - - 30
o
C/W
TO-220 - - 62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
ON
V
DD
= 30V, I
D
≅ 75A,
R
L
= 0.4Ω, V
GS
= 10V,
R
GS
= 3.0Ω
--187ns
Turn-On Delay Time t
d(ON)
-13- ns
Rise Time t
r
- 125 - ns
Turn-Off Delay Time t
d(OFF)
-46- ns
Fall Time t
f
-57- ns
Turn-Off Time t
OFF
--147ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
≅ 75A,
R
L
= 0.4Ω
I
g(REF)
= 1.0mA
(Figure 13)
- 175 210 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 90 108 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 5.9 7.0 nC
Gate to Source Gate Charge Q
gs
-14-nC
Reverse Transfer Capacitance Q
gd
-39-nC
CAPACITANCE SPECIFICATIONS
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
- 3200 - pF
Output Capacitance C
OSS
- 1170 - pF
Reverse Transfer Capacitance C
RSS
- 310 - pF
HUF75344G3, HUF75344P3