Datasheet

©2009 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. C0
CAPACITANCE SPECIFICATIONS
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
- 4000 - pF
Output Capacitance C
OSS
- 1450 - pF
Reverse Transfer Capacitance C
RSS
- 450 - pF
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 75A - - 1.25 V
Reverse Recovery Time t
rr
I
SD
= 75A, dI
SD
/dt = 100A/µs--55ns
Reverse Recovered Charge Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/µs--80nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125 175
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
20
40
60
80
50 75 100 125 150 175
0
25
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.1
1
2
0.01
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
HUF75345G3, HUF75345P3, HUF75345S3S