Datasheet

IRFM120A
BV
DSS
= 100 V
R
DS(on)
= 0.2 !
I
D
= 2.3 A
100
2.3
1.84
18
"20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
300
52--
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 #A (Max.) @ V
DS
= 100V
! Lower R
DS(ON)
: 0.155 ! (Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
$JA
%/W
Characteristic Max. UnitsSymbol Typ.
*
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25%)
Continuous Drain Current (T
A
=70%)
Drain Current-Pulsed
&
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
'
Avalanche Current
&
Repetitive Avalanche Energy
&
Peak Diode Recovery dv/dt
(
Total Power Dissipation (T
A
=25%)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/%
A
%
V
DSS
V
*
P
D
*
IEEE802.3af Compatible
Rev. C