Datasheet

December 2013
IRL640A
N-Channel Logic Level A-FET
200 V, 18 A, 180 mΩ
Description
IRL640A — N-Channel Logic Level A-FET
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
www.fairchildsemi.com
1
These N-Channel enhancement m
o
d
e
power field
e
f
f
e
c
t
transistors are produced using Fairchild’s
p
r
o
p
r
i
et
ary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switching DC/DC
converters, switch mode power supplies, DC-AC
converters for uninterrupted power supply and motor
control.
Features
•
18 A, 200 V, R
DS(on)
= 180 mΩ @ V
GS
= 5 V
•
Low Gate Charge (Typ. 40 nC)
•
Low Crss (Typ. 95 pF)
•
Fast Switching
•
100% Avalanche Tested
•
Improved dv/dt Capability
G
S
D
•
Logic-Level Gate Drive
TO-220
G
D
S
200
18
11.4
63
±
20
64
18
11
5
110
0.88
- 55 to +150
300
Absolute Maximum Ratings
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Value Units
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/°C
A
°C
Symbol
V
DSS
V
1.14
--
62.5
--
0.5
--
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θCS
R
θJA
°C/W
Max. UnitsSymbol Typ.
Thermal Resistance