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ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode

ISL9R860P2, ISL9R860S3ST

Features

Applications

•

SMPS FWD

• Hard Switched PFC Boost Diode

• UPS

Free Wheeling Diode

• Motor Driv

e FWD

•

Snubber Diode

Device Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter

Ratings

Unit

RRM

Peak Repetitive Reverse Voltage 600 V

RWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

F(AV)

Average Rectified Forward Current (T

= 147

C) 8 A

FRM

Repetitive Peak Surge Current (20kHz Square Wave) 16 A

FSM

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A

Power Dissipation 85 W

AVL

Avalanche Energy (1 A, 40 mH)

20 mJ

, T

STG

Operating and Storage Temperature Range -55 to 175 °C

PKG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

CATHODE

(FLANGE)

CATHODE

ANODE

JEDEC TO-263AB(D

-PAK)

JEDEC TO-220AC-2L

CATHODE

(FLANGE)

ANODE

N/C

Package

Symbol

November 2013

• Stealth Recovery t

= 28 ns (@ I

= 8 A)

• Max Forward Voltage, V

= 2.4 V (@ T

= 25°C)

• 600 V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS Compliant

8 A, 600 V, STEALTH™ Diode

The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode

optimized for low loss performance in high frequency hard

switched applications. The STEALTH™ family exhibits low

reverse recovery current (I

) and exceptionally soft recovery

under typical operating conditions. This device is intended for

use as a free wheeling or boost diode in power supplies and

other power switching applications. The low I

and short ta

phase reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions under

which the diode may be operated without the use of additional

snubber circuitry. Consider using the STEALTH™ diode with

an SMPS IGBT to provide the most efficient and highest

power density design at lower cost.

ISL9R860P2, ISL9R860S3ST Rev. C1

www.fairchildsemi.com1

Description

Summary of content (8 pages)

PAGE 1
ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTH™ Diode Features • Stealth Recovery trr = 28 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • SMPS FWD • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications.
PAGE 2
Part Number Top Mark ISL9R860P2 Packing Method Reel Size Tape Width Quantity Package ISL9R860P2 TO-220AC-2L ISL9R860S3ST ISL9R860S3ST TO-263AB(D2-PAK) Tube N/A N/A 50 Reel 13" Dia 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.
PAGE 3
16 100 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 175oC 14 150oC 12 25oC 10 125oC 8 100oC 6 4 150oC 10 125oC 100oC 1 25oC 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0.1 100 2.25 2.5 2.75 200 300 Figure 1. Forward Current vs Forward Voltage 600 90 VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C 80 70 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A 70 60 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 Figure 2.
PAGE 4
350 S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125°C 5 4 IF = 16A IF = 8A 3 IF = 4A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125°C 300 IF = 16A 250 IF = 8A 200 150 IF = 4A 100 50 100 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) 500 600 700 800 900 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 10 1000 800 600 400 200 0 0.1 1 10 100 Figure 9. Junction Capacitance vs Reverse Voltage 1.
PAGE 5
VGE AMPLITUDE AND RG CONTROL diF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE CURRENT SENSE trr dt ta tb 0 + VDD - MOSFET t1 diF 0.25 IRM IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VAVL R + IL VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev.
PAGE 6
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Mechanical Dimensions Figure 16. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Package Dimensions Figure 17. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.