Datasheet

ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Symbol Paramet
er Test Conditions Min Typ Max
Unit
I
R
Instantaneous Reverse Current
V
R
= 600 V
T
C
= 25°C - - 100 µA
T
C
= 125°C - - 1.0 mA
V
F
Instantaneous Forward Voltage
I
F
= 8 A
T
C
= 25°C - 2.0 2.4 V
T
C
= 125°C - 1.6 2.0 V
C
J
Junction Capacitance
V
R
= 10 V, I
F
= 0 A
- 30 - pF
t
rr
Reverse Recovery Time
I
F
= 1 A, di
F
/dt = 100 A/µs, V
R
= 30 V
- 18 25 ns
I
F
= 8 A, di
F
/dt = 100 A/µs, V
R
= 30 V
- 21 30 ns
t
rr
Reverse Recovery Time
I
F
= 8 A,
di
F
/dt = 200 A/µs,
V
R
= 390 V, T
C
= 25°C
-28-ns
I
rr
Reverse Recovery Current
- 3.2 - A
Q
rr
Reverse Recovery Charge - 50 - nC
t
rr
Reverse Recovery Time
I
F
= 8 A,
di
F
/dt = 200 A/µs,
V
R
= 390 V,
T
C
= 125°C
-77-ns
S Softness Factor (t
b
/t
a
)-3.7-
I
rr
Reverse Recovery Current
- 3.4 - A
Q
rr
Reverse Recovery Charge - 150 - nC
t
rr
Reverse Recovery Time
I
F
= 8 A,
di
F
/dt = 600 A/µs,
V
R
= 390 V,
T
C
= 125°C
-53-ns
S Softness Factor (t
b
/t
a
)-2.5-
I
rr
Reverse Recovery Current
- 6.5 - A
Q
rr
Reverse Recovery Charge 195 - nC
dI
M
/dt Maximum di/dt during t
b
- 500 - A/µs
R
θJC
Thermal Resistance Junction to Case - - 1.75 °C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263 62 °C/W
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. C1
www.fairchildsemi.com
2
Part Number Top Mark
Package
Packing Method Reel Size Tape Width Quantity
ISL9R860P2
ISL9R860P2
TO-220AC-2L
Tube N/A N/A
50
ISL9R860S3ST
ISL9R860S3ST
TO-263AB(D
2
-PAK)
Reel
13" Dia 24mm
800