Datasheet

ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. t
a
and t
b
C
urves vs di
F
/dt
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
Figure 6. Maximum Reverse Recovery Current
vs d
i
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
0 0.5 0.75 1 2.50.25 1.5 2 2.25
0
2
4
6
8
10
12
14
16
2.75
25
o
C
175
o
C
150
o
C
100
o
C
125
o
C
1.751.25
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (µA)
100
10
1
100 200 300 500 600400
0.1
25
o
C
175
o
C
150
o
C
125
o
C
100
o
C
I
F
, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10 16
t, RECOVERY TIMES (ns)
70
80
2 4 6 8 12 14
V
R
= 390V, T
J
= 125°C
t
b
AT di
F
/dt
= 200A/µs, 500A/µs, 800A/µs
t
a
AT di
F
/dt = 200A/µs, 500A/µs, 800A/µs
100
0
10
20
30
40
50
60
700 1000
t, RECOVERY TIMES (ns)
200 300 400 500 600 800 900
70
80
90
V
R
= 390V, T
J
= 125°C
t
b
AT I
F
= 16A, 8A, 4A
t
a
AT I
F
= 16A, 8A, 4A
I
F
, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
I
rr
, MAX REVERSE RECOVERY CURRENT (A)
di
F
/dt = 800A/µs
di
F
/dt = 500A/µs
di
F
/dt = 200A/µs
V
R
= 390V, T
J
= 125°C
9
10
11
2 4 6 8 10 12 14
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
2
4
6
8
10
700 1000
I
rr
, MAX REVERSE RECOVERY CURRENT (A)
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
12
14
200 300 400 500 600 800 900
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. C1
www.fairchildsemi.com
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