Datasheet

ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs di
F
/dt
di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 8. Reverse Recovery
Charge vs di
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
100
1
2
3
4
5
6
700 1000
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
S, REVERSE RECOVERY SOFTNESS FACTOR
200 300 400 500 600 800 900
50
100
150
200
25
0
300
350
V
R
= 390V, T
J
= 125°C
I
F
= 16A
I
F
= 8A
I
F
= 4A
Q
RR
, REVERSE RECOVERY CHARGE (nC)
100 700 1000200 300 400 500 600 800 900
V
R
, REVERSE VOLTAGE (V)
C
J
, JUNCTION CAPACITANCE (pF)
0
200
400
600
800
1000
1200
0.1 100101
4
0
150 155 165140 175160
6
8
10
T
C
, CASE TEMPERATURE (
o
C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
170145
2
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θJA
, NORMALIZED
THERMAL IMPEDANCE
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
P
DM
t
1
t
2
1.0
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. C1
www.fairchildsemi.com
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