Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsJ112_D26Z, MOSFET

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113

Rev. B0 1

August 2012

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ112_SB51338 / MMBFJ113

N-Channel Switch

Features

• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.

• Sourced from Process 51.

• Source & Drain are interchangeable.

Absolute Maximum Ratings* T

= 25C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T

= 25C unless otherwise noted

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Symbol Parameter Value Units

Drain-Gate Voltage 35 V

Gate-Source Voltage -35 V

Forward Gate Current 50 mA

stg

Operating and Storage Junction Temperature Range -55 to +150 C

Symbol Parameter

Max.

Units

J111-113 *MMBFJ111-113

Total Device Dissipation

Derate above 25C

625

5.0

350

2.8

mW/C

JC

Thermal Resistance, Junction to Case 125 C/W

JA

Thermal Resistance, Junction to Ambient 357 556 C/W

J111

MMBFJ111

SOT-23

Mark: MMBFJ111 - 6P

J112

MMBFJ112

TO-92

J113

MMBFJ112_SB51338

MMBFJ113

MMBFJ112 - 6R

MMBFJ112_SB51338 - 6R

MMBFJ113 - 6S

NOTE: Source & Drain

are interchangeable.

Summary of content (6 pages)

PAGE 1
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable. MMBFJ111 MMBFJ112 MMBFJ112_SB51338 MMBFJ113 J111 J112 J113 G S G S TO-92 D SOT-23 Mark: MMBFJ111 - 6P D MMBFJ112 - 6R NOTE: Source & Drain MMBFJ112_SB51338 - 6R are interchangeable.
PAGE 2
Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units -1.0 nA -10 -5.0 -5.0 -3.0 V V V V 1.0 nA Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 IGSS VGS(off) ID(off) -35 Gate Reverse Current VGS = -15V, VDS = 0 Gate-Source Cutoff Voltage VDS = 5.0V, ID = 1.0A Drain Cutoff Leakage Current VDS = 5.0V, VGS = -10V 111 112 MMBFJ112_SB51338 113 -3.0 -1.0 -3.0 -0.
PAGE 3
Transfer Characteristics Transfer Characteristics 16 - DRAIN CURRENT (mA) VGS(off) = - 3.0 V - 55°C 25°C 125°C 30 VGS(off) = - 2.0 V 125°C 25°C - 55°C 20 V DS = 15 V 10 VGS(off) = - 1.6 V 25°C 125°C 12 8 VGS(off) = - 1.1 V 125°C 25°C - 55°C 4 I I 0 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 VGS(off) = - 3.0 V - 55°C 25°C 125°C 20 VGS(off) = - 2.
PAGE 4
- OUTPUT CONDUCTANCE ( μ mhos) TA = 25°C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V V GS(off) = - 3.0V 1 0.1 1 I D - DRAIN CURRENT (mA) 100 os 100 Output Conductance vs Drain Current 10 T A = 25°C 10 √ e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) C is (V DS = 20) C rs (V DS = 0) -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) V GS(off) = - 2.0V V GS(off) = - 0.85V 0.1 0.01 = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.
PAGE 5
25 V DD = 3.0V t r (ON) 20 15 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V T A = 25°C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) © 2012 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 Rev.
PAGE 6
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