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KSA1013 — PNP Epitaxial Silicon Transistor

KSA1013 Rev. 1.1.0 1

September 2013

KSA1013

PNP Epitaxial Silicon Transistor

Features

• Color TV Audio Output

• Color TV Vertical Deflection Output

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

KSA1013YBU

A1013 TO-92 3L

Bulk

KSA1013OBU

KSA1013YTA

Ammo

KSA1013OTA

Symbol Parameter Ratings Units

CBO

Collector-Base Voltage -160 V

CEO

Collector-Emitter Voltage -160 V

EBO

Emitter-Base Voltage -6 V

Collector Current -1 A

Base Current -0.5 A

Junction Temperature 150 °C

STG

Storage Temperature -55 to 150 °C

TO-92L

1. Emitter 2. Collector 3. Base

Summary of content (6 pages)

PAGE 1
KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk A1013 TO-92 3L Ammo KSA1013OTA Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Value Unit Power Dissipation Parameter 900 mW Derate Above TA = 25°C 7.2 mW/°C Thermal Resistance, Junction to Ambient 139 °C/W Note: 1. PCB board size: FR-4 76 x 114 x 0.6T mm3(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted.
PAGE 3
-1.0 EMITTER COMMON o Ta=25 C IB = -12mA IB = -10mA -0.8 -0.7 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1000 EMITTER COMMON o IB = -15mA Ta=25 C -0.9 IB = -8mA -0.6 -0.5 IB = -6mA -0.4 IB = -4.5mA -0.3 IB = -3mA -0.2 IB = -2mA -0.1 IB = -1mA 100 VCE = -10V VCE = -5V 10 1 -10 -0.0 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 VCE = -2V -20 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2.
PAGE 4
EMITTER COMMON o Ta=25 C 100 VCE=-5V VCE=-2V 10 -1 IC M AX .=1 .0A -0.1 DC (T a =2 o 5C ) VCEO MAX 1 s 1m IC[A], COLLECTOR CURRENT IC MAX. (PULSE) s s m 10 00m 1 fT[MHz], CURRENT GAIN-BANDWITH PRODUCT -10 1000 -0.01 -1E-3 -1 -10 -1 -100 IC[mA], COLLECTOR CURRENT -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 8. Safe Operating Area Figure7. Current Gain Bandwidth Product © 2002 Fairchild Semiconductor Corporation KSA1013 Rev. 1.1.0 -10 www.fairchildsemi.
PAGE 5
KSA1013 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-92 Figure 9. 3-LEAD, TO-92L, 8 MM LONG BODY Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
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